Farshid Raissi obtained his Ph. D. and MSc from the university of Wisconsin, Madison in 1995 and 1992, respectively and his BS from Louisiana State University in 1988, all in electrical engineering. His research has included following areas:
micro and nano-electronics1-4, microfluidics5, IR sensors6-9, gas detectors10,11, millimeter and X-ray detectors12-15, superconductivity theory16,17, superconducting electronics18-22, and MEMS23.
His work has been primarily focused on his own ideas such as field effect diode1, vortex-vacancy transistor18, soliton transistor20, Josephson fluxonic diode22, Josephson fluxonic BJT21, and PtSi/porous Si single-electron device8.
He is also the cofounder of YnSaleh Inc. (www.ynsaleh.ir) and serves as its chairman of board of directors.

1) “A Brief Analysis of the Field Effect Diode and Breakdown Transistor,” IEEE Trans. on Elec. Dev. 43 (2), 362 (1996)

2) “High speed digital family using field effect diode,” Electronics Letters, 39 (4) 345, Feb (2003)

3) “Simulation results for nano scale Field Effect Diode.” IEEE Trans. Elect. Dev, (54), Issue 3, 613 – 617 (2007)

4) “Performance assessment of nanoscale field-effect diodes”, IEEE Trans. Elect. Dev. (58), (2011)

5) “Ultra sensitive bio-detection using single-electron effect”, Talanta, 14 Oct (2020)

6) “Highly sensitive PtSi/Porous Si Schottky Detectors,” IEEE Sensors, 2, 476-481, Oct (2002)

7) “Highly sensitive near IR detectors using n-type porous Si,” Sensors and Actuators, 104, 2, 117-120, April (2003)

8) “Single-electron Effect in PtSi/Porous Si Schottky Junctions”, IEEE Trans. on Electron Dev. 51, 3, 339-344, (2004)

9) “Room temperature infrared detection using PtSi/porous Si Schottky junctions” Sensor Letters, 5 (2007)

10) “Room temperature gas sensing ability of PtSi/Porous Si Schottky junction,” IEEE Sensors, Oct (2005)

11) “Room-temperature Hydrogen gas sensor'” Applied Physics Letters, 87, 164101, (2005)

12) ” Simulation results on sub-millimeter wave detection by Josephson fluxonic diode and a method to address its focal plane array” IEEE Trans. Appl. Superconductivity. (16), 1, 38 – 42, (2006)

13) “Graphene-Si Schottky IR detector”, IEEE J. Quantum Elec, 49(7), (2013)

14) “Feasibility of room-temperature GHz-THz direct detection in Graphene through hot-carrier effect”, IEEE Trans. Material Reliability. (2018)

15) “Josephson fluxonic diode as a pixel with radiation pumping of fluxons in GHz imaging systems”, J. Super. Magnet. (2018)

16) “Flux-flow behavior in high Tc superconductors”, Applied Physics Letters, June (2014)

17) “A potential justifying superconductivity and pseudogap formation in high-Tc superconductors”, AIP Advances, (2019)

18) “Three terminal superconducting digital transistor”, IEEE. Trans. Appl. Superc. (2019)

19) “A comparator based on soliton antisoliton pair generation in soliton diode”, Physica C, Feb (2014)

20) “Soliton Transistor”, selected and published in Virtual Journal of Appl. of Superconductivity, 9 (1), (2005)

21) “Josephson fluxonic bipolar junction transistor,” IEEE Trans. Appl. Supercon. 14, 1, pp. 87-93, (2004)

22) “Josephson Fluxonic Diode,” Appl. Phys. Lett. 65 (14), 1838 (1994)

23) “ The application of fine-grained, tensile polysilicon to mechanically resonant transducers,” Sensors and Actuators, A21- A23, 346-351 (1990)