About III-V Technologies
“III-V Technologies GmbH” is an Austrian startup specializing in innovative solutions for electronic industry applications in various sectors ranging from processors to power devices, quantum computing solutions and sensors.
We have introduced novel ideas in areas such as faster and more energy efficient processors, quantum computing transistor interfaces, semiconductor-based virus detectors as well as analogue devices and circuits.
Vision: To become a technological partner of choice for companies in the semiconductor industry.
Missions:
– Develop technologically sound solutions that address industry needs
– Deepen research in related fields with a focus on energy efficiency
– Collaborate with leading research institutions to identify new solutions
– Put in place partnership schemes to use existing capacities to produce energy efficient products
Principles:
– Innovative approaches and solutions
– Environmentally aware technological development
– Socially responsible investment
– Intellectual property adherence
Our Scientific Papers
1.
“Field-effect BJT: and adaptive and multifunctional nanoscale transistor”, Appl. Nanoscience. (2022)
2.
“Graphene-based bipolar junction transistor”, ECS J. Science. Tech. (2021)
3.
“Capacitance-resistance modeling of an inverter based on a nanoscale side-contacted field effect diode with an overshoot supression approach”, J. Comput. Elect., (2021)
4.
Selective capacitive anodization process for fabrication of Josephson fluxonic devices”, J. Super. Mangetism, (2021)
5.
“Ultrasensitive bio-detection using single-electron effect”, Talanta, (2021)
6.
“A potential justifying superconductivity and pseudogap formation in high-Tc superconductors”, AIP Advances, (2019)
7.
“Three terminal suepcrconducting digital transistor”, IEEE. Trans. Appl. Superc. (2019)
8.
“Josephson fluxonic diode as a pixel with radiation pumping of fluxons in Gigaherts imaging systems”, J. Super. Magnet. (2018)
9.
“Vortex-antivortex pair interaction with microwave standing waves: a chaos analysis of Josephson fluxonic diode for microwave applications”, IEEE Trans. Appl. Superc. (2019)
10.
“Feasibility of room-temperature GHz-THz direct detection in Graphen through hot-carrier effect”, IEEE Trans. Material Relai. (2018)
11.
“Dynamic microwave impedence of dc-biased Josephson fluxonic diode in the presense of magnetic field and rf drive”, IEEE Trans. Appl. Super. (2018)
12.
“Nonlinear response of Josephson fluxonic diode to radiation based on geometry and incident radiation point”, Chinease Journal of Physics, March (2018)
13.
“Flux-flow behavior in high Tc superconuctors”, Applied Physics Letters, June (2014)
14.
“A comparator based on soliton antisoliton pair generation in soliton diode”, Physica C, Feb (2014)
15.
“Graphene-Si schottky IR detector”, IEEE J. Quantum Elec, 49(7), (2013)
16.
“Numerical investigation of soliton dynamics, injection into the transition region of a soliton diode”, Physica C, (2013)
17.
“Pore size dependence of PtSi/Porous Si Schottky barrier detectors on quantum efficiency response”, Sensors and Actuators A, 182, (2012)
18.
“Performance assessment of nanoscale field-effect diodes”, IEEE Trans. Elect. Dev Vol (58), (2011)
19.
“Performance simulation of a three-dimensional nanoscale field-effect diode”, Semi. Sci, Tech. Vol (26), Issue 4, (2011)
20.
“Optimizing switching frequency of the soliton transistor by numerical simulation”, Physica C, 469, (2009)
21.
“Simulation results for nano scale Field Effect Diode.” IEEE Trans. Elect. Dev, Vol(54), Issue 3, 613 – 617 (2007)
22.
“Room temperature infared detection using PtSi/porous Si schottky junctions” Sensor Letters, Vol 5 (2007)
23.
“Simulation results on submillimeter wave detection by Josephson fluxonic diode and a method to address its focal plane array” IEEE Trans. Appl. Superconductivity Vol(16), Issue 1, 38 – 42, 2006
24.
“Design and evaluation of basic standard encryption algorithm modules using nanosized CMOS-molecular circuits” Nanotechnology, Vol(17) 89-99, 2006.
25.
“Room-temperatre Hydrogen gas sensor'” Applied Physics Letters,87,164101, 2005.
26.
“Soliton transistor”, Applied Physics Letters, 86 (26),263503,27-JUN (2005)
27.
“Soliton Transistor”, selected and published in Virtual Journal of Appl. of Superconductivity, Vol 9 (1),July 1, 2005
28.
“Disappearance of Fiske steps in Josephson fluxonic diode and Josephson fluxonic bipolar junction transistor”, IEEE Trans. on Appl. Super. 15(3)3831,sept. 2005
29.
“An Improved Differential Comparator with Field Effect Diode Output Stage”, Journal of Circuits, Systems, and Computers (JCSC) Vol. 14, No. 5 (October 2005)
30.
“Room temperature gas sensing ability of PtSi/Porous Si schottky junction,” IEEE Sensors, Oct (2005)
31.
“Assessing the effect of coulomb repulsion asymmetry on electron pairing”, Internationa Journal of Modern Physics B (IJMPB), vol 18, No. 26, (2004)3409-3418
32.
“Josephson fluxonic bipolar junction transistor,” IEEE Trans. Appl. Supercon. Vol. 14, issue 1, pp. 87-93, March 2004
33.
“Single-electron Effect in PtSi/Porous Si Schottky Junctions”, IEEE Trans. on Electron Dev, vol 51, Issue 3, pp. 339-344, March 2004
34.
“Modeling of the Josephson fluxonic diode,” IEEE Trans. Appl. Super, Vol 13, Issue 3, pp. 3817-3820, Sept 2003.
35.
“A possible explanation for high quantum efficiency of PtSi/Si IR detectors,” IEEE Trans. Elec. Dev. Vol 50 (4), 1134 April 2003.
36.
“Highly sensitive near IR detectors using n-type porous Si,” Sensors and Actuators, vol 104, Issue 2, pp. 117-120, April (2003)
37.
“High speed digital family using field effect diode,” Electronics Letters, 39 (4) 345 Feb (2003)
38.
“Highly sensitive PtSi/Porous Si SchottkyDetectors,” IEEE Sensors, 2( 5), pp. 476-481, Oct (2002)
39.
“A Brief Analysis of the Field Effect Diode and Breakdown Transistor,” IEEE Trans. on Elec. Dev. 43 (2), 362 (1996)
40.
“Comparison of Simulation and Experiment for a Josephson Fluxonic Diode,” IEEE Trans. on Appl. Superc. 5 (2), 2943 (1995)
41.
“Josephson Fluxonic Diode,” Appl. Phys. Lett. 65 (14), 1838 (1994)
42.
“Magnetic field sensitivity of variable thickness microbriges in TBCCO, BSCCO, and YBCO,” IEEE Trans. Appl. Super. 4 (4), 228 (1994)
43.
“The application of fine-grained, tensile polysilicon to mechanically resonant transducers,” Sensors and Actuators, A21- A23 (1990) 346-351
Our team
Core team
The core team has more than a century of entrepreneurship and expertise in relevant fields
Bijan Khajehpour
CEO
Matthias Mäke-Kail
COO
Farshid Raissi
CTO
Boris Kirn
Partner
Shahram Sadeghi
Business Developement
Isabella Herner
Coordinator
Azam Ashouri
Chemical Engineer
Gregory Greenfield
Electrical Engineer
Florian Grill
Partner
Technology Advisors
Prof. Johannes Fink
IST Austria
Prof. Jean-Michel Sallese
EFPL, Lausanne
Leonard Gagea
Semiconductor Specialist